Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime

Yousif, M. Y. A.M. Y. A.YousifWillander, M.M.WillanderLundgren, P.P.LundgrenCaymax, MattyMattyCaymax2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4965Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regimeProceedings paper