Millesimo, M.M.MillesimoBakeroot, BenoitBenoitBakerootBorga, MatteoMatteoBorgaPosthuma, NielsNielsPosthumaDecoutere, StefaanStefaanDecoutereSangiorgi, E.E.SangiorgiFiegna, C.C.FiegnaTallarico, A. N.A. N.Tallarico2023-06-012023-02-272023-06-0120221541-7026WOS:000922926400158https://imec-publications.be/handle/20.500.12860/41180Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress ConditionProceedings paper10.1109/IRPS48227.2022.9764592978-1-6654-7950-9WOS:000922926400158PERCOLATION THEORYTHRESHOLD VOLTAGEV-THBREAKDOWNTECHNOLOGY