Hsu, BrentBrentHsuSimoen, EddyEddySimoenEneman, GeertGeertEnemanMerckling, ClementClementMercklingMols, YvesYvesMolsAlian, AliRezaAliRezaAlianLanger, RobertRobertLangerCollaert, NadineNadineCollaertHeyns, MarcMarcHeyns2021-10-252021-10-252018-06https://imec-publications.be/handle/20.500.12860/30911Trap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctionsProceedings paper