Trojman, LionelLionelTrojmanRagnarsson, Lars-AkeLars-AkeRagnarssonPantisano, LuigiLuigiPantisanoLujan, GuilhermeGuilhermeLujanHoussa, MichelMichelHoussaSchram, TomTomSchramSchaekers, MarcMarcSchaekersVan Ammel, AnnemieAnnemieVan AmmelGroeseneken, GuidoGuidoGroesenekenDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-162021-10-162005-06https://imec-publications.be/handle/20.500.12860/11336Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devicesJournal article