Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

Li, XiangdongXiangdongLiVan Hove, MarleenMarleenVan HoveZhao, MingMingZhaoGeens, KarenKarenGeensGuo, WeimingWeimingGuoYou, ShuzhenShuzhenYouStoffels, SteveSteveStoffelsLempinen, Vesa-PekkaVesa-PekkaLempinenSormunen, JaakkoJaakkoSormunenGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-252021-10-2520180741-3106https://imec-publications.be/handle/20.500.12860/31174Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integrationJournal articlehttps://ieeexplore.ieee.org/document/8355807/