A new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configuration

Breder, T.T.BrederReuter, R.R.ReuterDaumann, W.W.DaumannSchreurs, DominiqueDominiqueSchreursvan der Zanden, KoenKoenvan der ZandenBrockerhoff, W.W.BrockerhoffTegude, F. J.F. J.Tegude2021-09-302021-09-301998https://imec-publications.be/handle/20.500.12860/2418A new consistent RF- and noise model with special emphasis on impact ionization for dual-gate HFET in cascode configurationProceedings paper