Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

Franco, JacopoJacopoFrancoKaczer, BenBenKaczerStesmans, AndreAndreStesmansAfanasiev, ValeriValeriAfanasievMartens, KoenKoenMartensAoulaiche, MarcMarcAoulaicheGrasser, TiborTiborGrasserMitard, JeromeJeromeMitardGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15322Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETsMeeting abstract