200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios

Ramesh, AnishaAnishaRameshBerger, PaulPaulBergerDouhard, BastienBastienDouhardVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLoo2021-10-202021-10-202012-06https://imec-publications.be/handle/20.500.12860/21375200mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratiosMeeting abstract