Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

Bellenger, FlorenceFlorenceBellengerMerckling, ClementClementMercklingPenaud, JulienJulienPenaudHoussa, MichelMichelHoussaCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-172021-10-172008-10https://imec-publications.be/handle/20.500.12860/13367Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam depositionProceedings paper