Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR

Simoen, EddyEddySimoenVisalli, DomenicaDomenicaVisalliVan Hove, MarleenMarleenVan HoveLeys, MaartenMaartenLeysFavia, PaolaPaolaFaviaBender, HugoHugoBenderBorghs, GustaafGustaafBorghsNguyen, A.P.D.A.P.D.NguyenStesmans, AndreAndreStesmans2021-10-202021-10-2020120031-8965https://imec-publications.be/handle/20.500.12860/21519Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESRJournal article