Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect tranistors

Lukyanchikova, N.B.N.B.LukyanchikovaPetricuk, M.V.M.V.PetricukGarbar, P.P.GarbarMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-152021-10-152003-10https://imec-publications.be/handle/20.500.12860/7836Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect tranistorsJournal article