Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

Ulyashin, A.A.UlyashinJob, R.R.JobFahrner, W.W.FahrnerRichard, OlivierOlivierRichardBender, HugoHugoBenderClaeys, CorCorClaeysSimoen, EddyEddySimoenGrambole, D.D.Grambole2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6898Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated siliconJournal article