Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates

Verhulst, AnneAnneVerhulstVandenberghe, WilliamWilliamVandenbergheMaex, KarenKarenMaexDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-1720080741-3106https://imec-publications.be/handle/20.500.12860/14748Complementary silicon-based heterostructure tunnel-FETs with high tunnel ratesJournal article