Eneman, GeertGeertEnemanDelabie, AnneliesAnneliesDelabieVan Elshocht, SvenSvenVan ElshochtDe Jaeger, BriceBriceDe JaegerNicholas, GarethGarethNicholasMartens, KoenKoenMartensBrunco, DavidDavidBruncoZimmerman, PaulPaulZimmermanHoussa, MichelMichelHoussaPourtois, GeoffreyGeoffreyPourtoisKaczer, BenBenKaczerLeys, FrederikFrederikLeysWinderickx, GillisGillisWinderickxHuyghebaert, CedricCedricHuyghebaertTerzieva, ValentinaValentinaTerzievaLoo, RogerRogerLooCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisHeyns, MarcMarcHeyns2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12123Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistorOral presentation