Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Srinivasan, PurushothamanPurushothamanSrinivasanCrupi, F.F.CrupiSimoen, EddyEddySimoenMagnone, P.P.MagnonePace, C.C.PaceMisra, D.D.MisraClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12938Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacksJournal article