Rinaudo, PietroPietroRinaudoChasin, AdrianAdrianChasinKaczer, BenBenKaczerZhao, YingYingZhaoDekkers, HaroldHaroldDekkersSubhechha, SubhaliSubhaliSubhechhaBelmonte, AttilioAttilioBelmonteAfanas'ev, ValeriValeriAfanas'evDe Wolf, IngridIngridDe WolfFranco, JacopoJacopoFranco2026-09-102026-09-1020260018-93831557-9646https://imec-publications.be/handle/20.500.12860/60314We present a finite-element-based 1-D formalism to solve the Poisson equation for a thin-film transistor with a floating body. We apply our framework to InGaZnO (IGZO)-based devices, taking into account its subgap density of states (DoS), revealing its impact on device electrostatics, which is fundamental for predicting device performance and reliability. Our simple 1-D approach yields identical results as the more computationally intensive 2-D TCAD implementations, and it enables the convenient implementation of physics-based IGZO-specific models. Finally, we apply the new framework to quantify the IGZO deep subgap DoS measured by light-assisted I – V spectroscopy.engJournal article10.1109/ted.2026.3688212WOS:001760533400001TRANSISTORS1557-9646