On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates

Martens, KoenKoenMartensChui, Chi OnChi OnChuiBrammertz, GuyGuyBrammertzDe Jaeger, BriceBriceDe JaegerKuzum, DuyguDuyguKuzumMeuris, MarcMarcMeurisHeyns, MarcMarcHeynsKrishnamohan, TejasTejasKrishnamohanSaraswat, KrishnaKrishnaSaraswatMaes, HermanHermanMaesGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-1720080018-9383https://imec-publications.be/handle/20.500.12860/14128On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substratesJournal article