Lander, RobRobLanderSchram, TomTomSchramLujan, GuilhermeGuilhermeLujanHooker, JacobJacobHookerVertommen, JohanJohanVertommenLee, S.S.LeeDeweerd, WimWimDeweerdBoullart, WernerWernerBoullartVan Elshocht, SvenSvenVan ElshochtCarter, RichardRichardCarterKubicek, StefanStefanKubicekDe Meyer, KristinKristinDe MeyerDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7774TaN metal gate MOSFETs with agressively scaled HfO2 dielectricsProceedings paper