Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

Belmonte, AttilioAttilioBelmonteKar, Gouri SankarGouri SankarKar2026-06-042026-06-042025https://imec-publications.be/handle/20.500.12860/59553Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges. A new DRAM bit cell without a capacitor and with two thin-film transistors — each with an oxide semiconductor channel such as indium-gallium-zinc-oxide — shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM.engDisrupting the DRAM roadmap with capacitor-less IGZO-DRAM technologyEditorial material10.1038/s44287-025-00162-wWOS:001625335000007