An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates

Waldron, NiamhNiamhWaldronMerckling, ClementClementMercklingGuo, WeimingWeimingGuoOng, PatrickPatrickOngTeugels, LieveLieveTeugelsAnsar, SheikhSheikhAnsarTsvetanova, DianaDianaTsvetanovaSebaai, FaridFaridSebaaivan Dorp, DennisDennisvan DorpMilenin, AlexeyAlexeyMileninLin, DennisDennisLinNyns, LauraLauraNynsMitard, JeromeJeromeMitardPourghaderi, Mohammad AliMohammad AliPourghaderiDouhard, BastienBastienDouhardRichard, OlivierOlivierRichardBender, HugoHugoBenderBoccardi, GuillaumeGuillaumeBoccardiCaymax, MattyMattyCaymaxHeyns, MarcMarcHeynsVandervorst, WilfriedWilfriedVandervorstBarla, KathyKathyBarlaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24800An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substratesProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6894349&contentType=Conference+Publications