Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations

Vandemaele, MichielMichielVandemaeleKaczer, BenBenKaczerBury, ErikErikBuryFranco, JacopoJacopoFrancoVaisman Chasin, AdrianAdrianVaisman ChasinMakarov, AlexanderAlexanderMakarovMertens, HansHansMertensHellings, GeertGeertHellingsGroeseneken, GuidoGuidoGroeseneken2023-08-082023-07-152023-07-312023-08-082023-05-151541-7026WOS:001007431500148https://imec-publications.be/handle/20.500.12860/42148Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD SimulationsProceedings paper10.1109/IRPS48203.2023.10118211978-1-6654-5672-2WOS:001007431500148Electrical & electronic engineeringhot-carrier degradationtransistors