Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Kim, DongukDongukKimKim, Je-HyukJe-HyukKimChoi, Woo SikWoo SikChoiYang, Tae JunTae JunYangJang, Jun TaeJun TaeJangBelmonte, AttilioAttilioBelmonteRassoul, NouredineNouredineRassoulSubhechha, SubhaliSubhaliSubhechhaDelhougne, RomainRomainDelhougneKar, Gouri SankarGouri SankarKarLee, WonsokWonsokLeeCho, Min HeeMin HeeChoHa, DaewonDaewonHaKim, Dae HwanDae HwanKim2023-03-302022-11-282023-03-3020222045-2322WOS:000882475500072https://imec-publications.be/handle/20.500.12860/40793Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppressionJournal article10.1038/s41598-022-23951-xWOS:000882475500072THIN-FILM TRANSISTORSGATEMEDLINE:36371536