Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD models

Betti Beneventi, G.G.Betti BeneventiReggiani, S.S.ReggianiGnudi, A.A.GnudiGnani, E.E.GnaniAlian, AliRezaAliRezaAlianCollaert, NadineNadineCollaertMocuta, AndaAndaMocutaThean, AaronAaronTheanBaccarani, G.G.Baccarani2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/24988Analytical model of thin-body InGaAs MOSFET low-field electron mobility for integration in TCAD modelsProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7063818