Vincent, BenjaminBenjaminVincentGencarelli, FedericaFedericaGencarelliLin, DennisDennisLinNyns, LauraLauraNynsRichard, OlivierOlivierRichardBender, HugoHugoBenderDouhard, BastienBastienDouhardMoussa, AlainAlainMoussaMerckling, ClementClementMercklingWitters, LiesbethLiesbethWittersVandervorst, WilfriedWilfriedVandervorstLoo, RogerRogerLooCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/20094Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developmentsProceedings paper