Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks

Pawlak, MalgorzataMalgorzataPawlakSwerts, JohanJohanSwertsPopovici, Mihaela IoanaMihaela IoanaPopoviciKaczer, BenBenKaczerKim, Min-SooMin-SooKimWang, Wan-ChihWan-ChihWangTomida, KazuyukiKazuyukiTomidaGovoreanu, BogdanBogdanGovoreanuDelmotte, JorisJorisDelmotteAfanas'ev, ValeriValeriAfanas'evSchaekers, MarcMarcSchaekersVandervorst, WilfriedWilfriedVandervorstKittl, JorgeJorgeKittl2021-10-202021-10-2020120003-6951https://imec-publications.be/handle/20.500.12860/21272Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacksJournal articlehttp://dx.doi.org/10.1063/1.4737871