High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing

Xie, QiQiXieDeng, ShaorenShaorenDengSchaekers, MarcMarcSchaekersLin, DennisDennisLinCaymax, MattyMattyCaymaxDelabie, AnneliesAnneliesDelabieJiang, Yu-longYu-longJiangQu, Xin-PinXin-PinQuDeduytsche, DavyDavyDeduytscheDetavemier, ChristopheChristopheDetavemier2021-10-192021-10-1920110741-3106https://imec-publications.be/handle/20.500.12860/20162High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealingJournal article