Low-frequency noise and DC characterization of ionization damage in a 1-µm SOI CMOS technology adapted for space applications

Simoen, EddyEddySimoenMagnusson, UlfUlfMagnussonVan den Bosch, GeertGeertVan den BoschSmeys, PeterPeterSmeysColinge, Jean-PierreJean-PierreColingeClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/497Low-frequency noise and DC characterization of ionization damage in a 1-µm SOI CMOS technology adapted for space applicationsProceedings paper