Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

Hayama, K.K.HayamaTakakura, K.K.TakakuraOhyama, H.H.OhyamaRafi, J.M.J.M.RafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10552Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafersProceedings paper