Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopy

Puurunen, RiikkaRiikkaPuurunenVandervorst, WilfriedWilfriedVandervorstBesling, Wim F. A.Wim F. A.BeslingRichard, OlivierOlivierRichardBender, HugoHugoBenderConard, ThierryThierryConardZhao, ChaoChaoZhaoDelabie, AnneliesAnneliesDelabieCaymax, MattyMattyCaymaxDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeynsViitanen, M.M.M.M.ViitanenDe Ridder, M.M.De RidderBrongersma, HiddeHiddeBrongersmaTamminga, Y.Y.TammingaDao, T.T.Daode Win, T.T.de WinVerheijen, M.M.VerheijenKaiser, M.M.KaiserTuominen, M.M.Tuominen2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9477Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: growth mode modelling and transmission electron microscopyJournal article