Double hard mask strategy for patterning 0.186 micron2 SRAM cells using FinFET technology

Demand, MarcMarcDemandVeloso, AnabelaAnabelaVelosoBrus, StephanStephanBrusDelvaux, ChristieChristieDelvauxDe Backer, JohanJohanDe BackerErcken, MoniqueMoniqueErckenBoullart, WernerWernerBoullart2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13652Double hard mask strategy for patterning 0.186 micron2 SRAM cells using FinFET technologyProceedings paper