Rothschild, AudeAudeRothschildKraus, P.A.P.A.KrausChua, T.C.T.C.ChuaNouri, F.F.NouriCubaynes, FlorenceFlorenceCubaynesVeloso, AnabelaAnabelaVelosoMertens, SofieSofieMertensDate, LucienLucienDateSchreutelkamp, RobRobSchreutelkampSchaekers, MarcMarcSchaekers2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9529Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectricsProceedings paper