Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

Perez Lozano, DanielDanielPerez LozanoSoulie, Jean-PhilippeJean-PhilippeSoulieHodges, BlakeBlakeHodgesPiao, XiaoyuXiaoyuPiaoO'Neal, SabineSabineO'NealValente-Feliciano, Anne-MarieAnne-MarieValente-FelicianoHerr, QuentinQuentinHerrTokei, ZsoltZsoltTokeiKim, Min-SooMin-SooKimHerr, AnnaAnnaHerr2025-07-082024-06-252025-07-0820240953-2048WOS:001249983100001https://imec-publications.be/handle/20.500.12860/44092Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuitsJournal article10.1088/1361-6668/ad4b61WOS:001249983100001TEMPERATURE