Characterization of advanced k1.9, 2.0 and 2.2 ultra-porous SiOC(H) films deposited by plasma-enhanced chemical vapor deposition

Redzheb, MuradMuradRedzhebArmini, SilviaSilviaArminiBaklanov, MikhaïlMikhaïlBaklanovVan der Voort, PascalrPascalrVan der Voort2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24428Characterization of advanced k1.9, 2.0 and 2.2 ultra-porous SiOC(H) films deposited by plasma-enhanced chemical vapor depositionMeeting abstract