Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

Torres, HHTorresMartino, Joao A.Joao A.MartinoRooyackers, RitaRitaRooyackersVandooren, AnneAnneVandoorenSimoen, EddyEddySimoenClaeys, CorCorClaeysAgopian, PaulaPaulaAgopian2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/29596Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristicProceedings paperhttp://ieeexplore.ieee.org/document/8112973/