Deng, ShaorenShaorenDengXie, QiQiXieSchaekers, MarcMarcSchaekersLin, DennisDennisLinCaymax, MattyMattyCaymaxDelabie, AnneliesAnneliesDelabieVan den Berghe, SvenSvenVan den BergheQu, XinpingXinpingQuDeduytsche, DavyDavyDeduytscheDetavernier, ChristopheChristopheDetavernier2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20587Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatmentMeeting abstract