Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT

Yu, HaoHaoYuFang, J.J.FangVermeersch, BjornBjornVermeerschPeralagu, UthayasankaranUthayasankaranPeralaguHan, HanHanHanRichard, OlivierOlivierRichardAlian, AliRezaAliRezaAlianBraga, N. de AlmeidaN. de AlmeidaBragaKazemi Esfeh, BabakBabakKazemi EsfehBanerjee, SourishSourishBanerjeeBury, ErikErikBuryParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2026-06-032026-06-0320232380-9248https://imec-publications.be/handle/20.500.12860/59529We elucidate a mechanism behind time-dependent on-state breakdown of GaN HEMTs, where the time-to-failure varies from sub-μs to hundreds of seconds. We reveal that the breakdown is sequentially caused by charge movement in the back barrier (BB), drain-corner electric field densification, impact ionization, and avalanche breakdown. Modeling of charge movement in the BB and impact ionization is key to predicting the on-state breakdown with TCAD.engCharge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMTProceedings paper10.1109/iedm45741.2023.10413747WOS:001693000200087