Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer

Derluyn, JoffJoffDerluynVan Daele, BennyBennyVan DaeleBoeykens, StevenStevenBoeykensCheng, KaiKaiChengRuythooren, WouterWouterRuythoorenLeys, MaartenMaartenLeysGermain, MarianneMarianneGermainVan Tendeloo, GustaafGustaafVan TendelooBorghs, GustaafGustaafBorghs2021-10-162021-10-162005-06https://imec-publications.be/handle/20.500.12860/10377Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layerProceedings paper