The 1/f noise behaviour of interface engineered polysilicon emitter bipolar transistors

Simoen, EddyEddySimoenDecoutere, StefaanStefaanDecoutereCuthbertson, AlanAlanCuthbertsonClaeys, CorCorClaeysDeferm, LudoLudoDeferm2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1488The 1/f noise behaviour of interface engineered polysilicon emitter bipolar transistorsProceedings paper