Investigations by capacitance methods of n-Si irradiated by electrons at 450°C

Neimash, V.B.V.B.NeimashKras'Ko, M.M.M.M.Kras'KoKraitchinski, A.M.A.M.KraitchinskiKolosyuk, A.G.A.G.KolosyukVoytovych, V.V.V.V.VoytovychSimoen, EddyEddySimoenRafi, J.M.J.M.RafiClaeys, CorCorClaeysVersluys, J.J.VersluysClauws, P.P.Clauws2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9343Investigations by capacitance methods of n-Si irradiated by electrons at 450°CJournal article