Kittl, JorgeJorgeKittlOpsomer, KarlKarlOpsomerPopovici, Mihaela IoanaMihaela IoanaPopoviciMenou, NicolasNicolasMenouKaczer, BenBenKaczerWang, Xin PengXin PengWangAdelmann, ChristophChristophAdelmannPawlak, MalgorzataMalgorzataPawlakTomida, KazuyukiKazuyukiTomidaRothschild, AudeAudeRothschildGovoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveSchaekers, MarcMarcSchaekersZahid, MohammedMohammedZahidDelabie, AnneliesAnneliesDelabieMeersschaut, JohanJohanMeersschautPolspoel, WouterWouterPolspoelClima, SergiuSergiuClimaPourtois, GeoffreyGeoffreyPourtoisKnaepen, W.W.KnaepenDetavernier, C.C.DetavernierAfanasiev, ValeriValeriAfanasievBlomberg, T.T.BlombergPierreux, DieterDieterPierreuxSwerts, JohanJohanSwertsFischer, PamelaPamelaFischerMaes, JanJanMaesManger, DirkDirkMangerVandervorst, WilfriedWilfriedVandervorstConard, ThierryThierryConardFranquet, AlexisAlexisFranquetFavia, PaolaPaolaFaviaBender, HugoHugoBenderBrijs, BertBertBrijsVan Elshocht, SvenSvenVan ElshochtJurczak, GosiaGosiaJurczakVan Houdt, JanJanVan HoudtWouters, DirkDirkWouters2021-10-172021-10-1720090167-9317https://imec-publications.be/handle/20.500.12860/15604High-k dielectrics for future generation memory devicesJournal article