Luo, XuyiXuyiLuoZhang, En XiaEn XiaZhangWang, Peng FeiPeng FeiWangLi, KanKanLiLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardReed, Robert A.Robert A.ReedFleetwood, Daniel M.Daniel M.FleetwoodSchrimpf, Ronald D.Ronald D.Schrimpf2023-07-032023-05-072023-07-0320231530-4388WOS:000967483600019https://imec-publications.be/handle/20.500.12860/41575Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETsJournal article10.1109/TDMR.2023.3240976WOS:000967483600019THERMALLY-STIMULATED-CURRENT1/F NOISEBORDER TRAPSACTIVATION-ENERGIESTHRESHOLD VOLTAGEMOS DEVICESDEFECTSOXIDESIKINETICS