Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors

Niu, JingjieJingjieNiuKim, DonggyuDonggyuKimLi, JieJieLiLyu, JiahuiJiahuiLyuLee, YoonmyungYoonmyungLeeLee, SungjooSungjooLee2025-01-102025-01-102025-JAN 21936-0851WOS:001389957900001https://imec-publications.be/handle/20.500.12860/45064Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect TransistorsJournal article10.1021/acsnano.4c14062WOS:001389957900001CONTENT-ADDRESSABLE MEMORYBOOLEAN LOGICREALIZATIONINPLANEMEDLINE:39746872