Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Belmonte, AttilioAttilioBelmonteOh, HyungrockHyungrockOhRassoul, NouredineNouredineRassoulDonadio, Gabriele LucaGabriele LucaDonadioMitard, JeromeJeromeMitardDekkers, HaroldHaroldDekkersDelhougne, RomainRomainDelhougneSubhechha, SubhaliSubhaliSubhechhaVaisman Chasin, AdrianAdrianVaisman Chasinvan Setten, MichielMichielvan SettenKljucar, LukaLukaKljucarMao, MingMingMaoPuliyalil, HarinarayananHarinarayananPuliyalilPak, MuratMuratPakTeugels, LieveLieveTeugelsTsvetanova, DianaDianaTsvetanovaBanerjee, KaustuvKaustuvBanerjeeSouriau, LaurentLaurentSouriauTokei, ZsoltZsoltTokeiGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKar2021-12-162021-12-062021-12-1620202380-9248WOS:000717011600012https://imec-publications.be/handle/20.500.12860/38546Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAMProceedings paper10.1109/IEDM13553.2020.9371900978-1-7281-8888-1WOS:000717011600012