Shlyakhov, I.I.ShlyakhovIakoubovskii, K.K.IakoubovskiiLin, D.D.LinAsselberghs, I.I.AsselberghsGaur, A.A.GaurDelie, G.G.DelieAfanas'ev, V.V.Afanas'ev2025-07-082025-07-082025-JUN 20021-8979WOS:001519065200009https://imec-publications.be/handle/20.500.12860/45882Energy band alignment in MoS<sub>2</sub>/HfO<sub>2</sub>: Transfer-related artifacts and interfacial effectsJournal article10.1063/5.0279067WOS:001519065200009INTERNAL PHOTOEMISSIONBARRIER HEIGHTMOS2TRANSISTORSMONOLAYERELECTRONSDEFECTSSILICON