Ti as a reactive gate electrode on high-k/p-Ge MOS capacitors

Fadida, SivanSivanFadidaNyns, LauraLauraNynsLin, DennisDennisLinVan Elshocht, SvenSvenVan ElshochtCaymax, MattyMattyCaymaxEizenberg, MosheMosheEizenberg2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/23799Ti as a reactive gate electrode on high-k/p-Ge MOS capacitorsMeeting abstract