Wang, DongboDongboWangTran Thi Ngoc LamPoelman, StijnStijnPoelmanReep, TomTomReepZhang, JingJingZhangRoelkens, GuntherGuntherRoelkensKuyken, BartBartKuyken2025-05-252025-05-252025978-1-5106-8490-40277-786XWOS:001481733500015https://imec-publications.be/handle/20.500.12860/45711We demonstrate an O-band Fabry-Pérot laser through the heterogeneous integration of a GaAs-based quantum dot optical amplifier onto a passive silicon nitride cavity using micro-transfer printing. The laser shows an ultra-low threshold current of 20mA at 18°C and can deliver nearly 0.4mW of single-side waveguide-coupled power. The spectral peak can be tuned from 1296nm to 1334nm as the temperature increases from 10°C to 50°C. Mode-locking is achieved with an injection current of 80mA and a saturable absorption voltage of -0.6V, generating a clear RF beat note at 28.6GHz with a signal-to-noise ratio of 20dB.Proceedings paper10.1117/12.3043001978-1-5106-8491-1WOS:001481733500015SILICON-NITRIDE