Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers

Ohyama, HidenoriHidenoriOhyamaSimoen, EddyEddySimoenClaeys, CorCorClaeysTakami, Y.Y.TakamiHayama, KiyoteruKiyoteruHayamaHakata, T.T.HakataTokuyama, J.J.TokuyamaKobayashi, K.K.KobayashiSunaga, H.H.SunagaPoortmans, JefJefPoortmansCaymax, MattyMattyCaymax2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2825Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layersProceedings paper