Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers

Buca, D.D.BucaHollander, B.B.HollanderFeste, S.S.FesteLenk, S.S.LenkTrinkaus, H.H.TrinkausMantl, S.S.MantlLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-162021-10-162007-01https://imec-publications.be/handle/20.500.12860/11824Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layersJournal article