Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPE

Liang, HuHuLiangSaripalli, YogaYogaSaripalliVan Hove, MarleenMarleenVan HoveKang, XuanwuXuanwuKangVrancken, EviEviVranckenZhao, MingMingZhaoKandaswamy, Prem KumarPrem KumarKandaswamyDecoutere, StefaanStefaanDecoutereLanger, RobertRobertLanger2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24139Growth techniques for high breakdown voltage in GaN/AlGaN HEMT on 200 mm Si (111) substrate by MOVPEMeeting abstract