Switching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memories

Goux, LudovicLudovicGouxLisoni, JuditJuditLisoniGille, ThomasThomasGilleDe Meyer, KristinKristinDe MeyerAttenborough, KarenKarenAttenboroughWouters, DirkDirkWouters2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12218Switching between two high-resistive states in Cu/chalcogenide/W structures for application in non-volatile memoriesProceedings paper